In the frame of the FINFET16V2 project, funded by INFN, the group at the EIL has developed, in collaboration with the Microelectronics Group at Università di Milano Bicocca, a current amplifier for measuring the extremely small currents in the gate terminal of CMOS transistors belonging to a 28 nm CMOS technology. The amplifier is monolithically integrated with the devices under test, consisting of a set of NMOS transistors with different channel length and width. The activity also aims at investigating the effects of ionizing radiation on the gate current. For this purpose, an automatic system is being designed for gate current monitoring during irradiation.
